Investigation of the formation of the 2.8 eV luminescence band in p-type GaN:Mg

Applied Physics Letters

Volumn 76, Issue 21, 2000, Pages 3011-3013

  Shahedipour, F ^a   Wessels, B W ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001272657     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126562     Document Type: Article

References (14)

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13. v + 0.6 eV, which is well within the accuracy of the calculations of Ref. 5 based on formation energies.
14. N in p-type material consistent with the present study.