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Volumn 182, Issue 3-4, 1997, Pages 309-313

Effects of hillocks and post-growth annealing on electrical properties in GaN grown by metalorganic chemical vapor deposition

(6) Lee, In Hwan a Choi, In Hoon a Lee, Cheul Ro b Son, Sung Jin b,c Leem, Jae Young b Noh, Sam Kyu b

a Korea University (South Korea)

b Korea Research Institute of Standards and Science (South Korea)

c OPTEL Semiconductor Corporation (South Korea)

Author keywords

Gallium nitride; Hall mobility; MOCVD; Post growth annealing; Surface morphology

Indexed keywords

ANNEALING; CARBON; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDES; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE;

HALL MOBILITY LIMITING COMPENSATORS; HILLOCKS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031549991 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00344-8 Document Type: Article

Times cited : (3)

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