Dynamical study of the yellow luminescence band in GaN

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 275-278

  Hoffmann, A ^a   Eckey, L ^a   Maxim, P ^a   Holst, J Chr ^a   Heitz, R ^a   Hofmann, D M ^b   Kovalev, D ^b   Stevde, G ^b   Volm, D ^b   Meyer, B K ^b   Detchprohm, T ^c   Hiramatsu, K ^c   Amano, H ^d   Akasaki, I ^d  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c NAGOYA UNIVERSITY   (Japan)

^d MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC EXCITATION; MAGNETIC RESONANCE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS;

OPTICALLY DETECTED MAGNETIC RESONANCE (ODMR); PHOTOLUMINESCENCE EXCITATION (PLE); RECOMBINATION MODEL; VALENCE BAND; YELLOW PHOTOLUMINESCENCE (YP) BAND;

OPTICAL FILMS;

EID: 0031075667     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00228-6     Document Type: Article

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