Resonant electron tunneling through defects in ultrathin SiO2 gate oxides in MOSFETs

Solid-State Electronics

Volumn 46, Issue 7, 2002, Pages 1027-1032

  Stadele M ^a   Fischer, B ^b   Tuttle, B R ^c   Hess, K ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c BEHREND COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL DEFECTS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); LEAKAGE CURRENTS; MONTE CARLO METHODS; MOSFET DEVICES; SILICA; ULTRATHIN FILMS;

HOT ELECTRONS; TUNNELING CURRENTS;

RESONANT TUNNELING;

EID: 0036642980     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00037-0     Document Type: Conference Paper

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