Neutron irradiation effects on standard and oxygenated silicon diodes

IEEE Transactions on Nuclear Science

Volumn 49 II, Issue 3, 2002, Pages 1027-1034

  Bisello, D ^a,b   Candelori, A ^a,b   Kaminski, A ^b   Pantano, D ^b   Rando, R ^b   Wyss, J ^c,d   Andrighetto, A ^b   Cindro, V ^e  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

^d INFN SEZIONE DI PISA   (Italy)

^e JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

High energy physics; Microstrip detectors; Radiation damage; Radiation effects; Silicon detectors

Indexed keywords

LEAKAGE CURRENT DENSITY; NEUTRON FLUENCE; OXYGENATION; SILICON DETECTORS; SILICON DIODES;

ANNEALING; CURRENT DENSITY; HIGH ENERGY PHYSICS; LEAKAGE CURRENTS; MICROSTRIP DEVICES; NEUTRON IRRADIATION; RADIATION DAMAGE; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SILICON SENSORS; SUBSTRATES;

SEMICONDUCTING SILICON;

EID: 0036624514     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.1039609     Document Type: Article

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