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Volumn 439, Issue 2-3, 2000, Pages 282-292

Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration: CERN project RD48 (The ROSE collaboration)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; NEUTRON IRRADIATION; OXYGEN; RADIATION HARDENING; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

EID: 0033889134     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00842-6     Document Type: Article
Times cited : (53)

References (29)
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    • ITME, Institute of Electronic Materials Technology, ul. Wolczynska, 01-919 Warszawa, Poland (also IR-measurements)
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  • 10
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    • Ph.D. Thesis, University Hamburg, see also DESY F35D-97-08
    • H. Feick, Ph.D. Thesis, University Hamburg, see also DESY F35D-97-08, 1997.
    • (1997)
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  • 13
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    • P. Clauws, University of Gent, Belgium (IR measurements)
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  • 19
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.