Time development and flux dependence of neutron-irradiation induced defects in silicon pad detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 426, Issue 1, 1999, Pages 51-55

  Zontar D ^a   Cindro, V ^a   Kramberger, G ^a   Mikuz M ^a  

^a JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ELECTRIC POTENTIAL; NEUTRON IRRADIATION; RADIATION DAMAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

FULL-DEPLETION VOLTAGE (FDV); PAD DETECTORS; SEMICONDUCTOR DETECTORS;

RADIATION DETECTORS;

EID: 0032629581     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)01468-5     Document Type: Article

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