Radiation damage of standard and oxygenated silicon diodes irradiated by 16-MeV and 27-MeV protons

IEEE Transactions on Nuclear Science

Volumn 48, Issue 4 I, 2001, Pages 1020-1027

  Bisello, D ^a,b   Wyss, J ^c,d   Candelori, A ^a,b   Kaminsky, A ^b   Pantano, D ^b  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

^d INFN SEZIONE DI PISA   (Italy)

Author keywords

Diodes; Proton radiation effects; Radiation detectors

Indexed keywords

NONIONIZING ENERGY LOSS FACTOR; OXYGENATED SILICON DIODES; SILICON DETECTORS;

ANNEALING; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRIC BREAKDOWN; ELECTRONIC EQUIPMENT MANUFACTURE; ELECTRONIC EQUIPMENT TESTING; PROTON IRRADIATION; RADIATION DAMAGE; SECONDARY ION MASS SPECTROMETRY; SILICON SENSORS; VOLTAGE MEASUREMENT;

RADIATION DETECTORS;

EID: 0035428525     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.958717     Document Type: Conference Paper

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