Comparison of radiation damage in silicon induced by proton and neutron irradiation

IEEE Transactions on Nuclear Science

Volumn 46, Issue 5, 1999, Pages 1310-1313

  Ruzin, A ^a,b   Casse, G ^a   Glaser, M ^a   Zanet, A ^a   Lemeilleur, F ^a   Watts, S ^a  

^a CERN   (Switzerland)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITIES; NEUTRONS; NUCLEAR REACTORS; PARTICLE DETECTORS; PROTONS; RADIATION HARDENING; SEMICONDUCTOR DEVICES; SILICON SENSORS;

NONIONIZING ENERGY LOSS; RADIATION HARDNESS; SILICON DETECTORS;

RADIATION DAMAGE;

EID: 0033207344     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.795808     Document Type: Article

References (15)

1. B. C. MacEvoy, G. Hall, and K. Gill, "Defect evolution in irradiated silicon detector material," Nucl. Instrum. Methods, vol. A, no. 374, pp. 12-26, 1996.
2. M. Moll, H. Feick, E. Fretwurst, G. Lindstrom, and C. Schütze, "Comparison of defects produced by fast neutrons and 60 Co-gammas in high resistivity silicon detectors using deep-level transient spectroscopy," Nucl. Instrum. Methods, vol. A, no. 388, pp. 335-339, 1997.
3. K. Gill, G. Hall, and B. MacEvoy, "Bulk damage effects in irradiated silicon detectors due to clustered divacancies," J. Appl. Phys., vol. 82, no. 1, pp. 126-136, 1997.
4. A. Van Ginneken, "Nonionizing energy deposition in silicon for radiation damage studies," Fermi Nat. Accelerator Lab., Internal Rep. FN-522, Oct. 1989.
5. E. A. Burke, "Energy dependence of proton-induced displacement damage in silicon," IEEE Trans. Nucl. Sei, vol. 33, pp. 1276-1281, 1986.
6. G. P. Summers, E. A. Burke, C. J. Dale, E. A. Wolicki, P. W. Marshal, and M. A. Gehlhausen, "Correlation of particle-induced displacement damage in silicon," IEEE Trans. Nucl. Sci., vol. 34, pp. 1134-1139, 1987.
7. E. Fretwurst, H. Feick, P. M. Glaser, C. Gossling, E. H. M. Heijne, A. Hess, F. Lemeilleur, G. Lindstrom, K. H. Mahlmann, A. Rolf, T. Schulz, and C. Soave, "Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments," Nucl. Instrum. Methods, vol. A, no. 342, pp. 119-125, 1994.
8. G. P. Summers, E. A. Burke, P. Shapiro, S. R. Messenger, and R. J. Walters, "Damage correlations in semiconductors exposed to gamma, electron and proton radiations," IEEE Trans. Nucl. Sci., vol. 40, pp. 1372-1379, 1993.
9. G. P. Summers, E. A. Burke, and M. A. Xapsos, "Displacement damage analogs to ionizing radiation effects," Radiation Meas., vol. 24, no. 1, pp. 1-8, 1995.
10. V. Cindro, G. Kramberger, M. Mikuz, and D. Zontar, "Bias-dependent annealing of radiation damage in neutron-irradiated silicon pH-n-n-l-diodes," Nucl. Instrum. Methods, vol. A, no. 419, pp. 132-136, 1998.
11. ITE-Institute of Electron Technology, 02-668 Warsaw, Poland.
12. E. Nossarzewska-Orlowska, Z. Luczynski, R. Kozlowski, Brzozowski, P. Zabierowski, and B. Majerowski, "Characterization of ITME silicon for detectors," in 3rd ROSE Workshop, DESY-Proc.-1998-02, Hamburg, Germany, Feb. 1998.
13. EVANS EUROPA, Brunei Univ., Uxbridge, Middlesex UB8 3PH, U.K. [14] B. Sopko, private communication.
14. A. Ruzin, G. Casse, M. Glaser, R. Talamonti, A. Zanet, and F. Lemeilleur, "Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with Oxygen, Carbon, Tin and Platinum," in Proc.e 6th Int. Conf. Advanced Technology and Particle Physics, Villa Olmo, Como, Italy, Oct. 1998.
15. S. J. Bates, B. Dezillie, C. Furetta, M. Classer, F. Lemeilleur, and E. Leon-Florian, "Proton irradiation of silicon detectors with different resistivities," IEEE Trans. Nucl. Sci., vol. 43, no. 3, pp. 1002-1008, 1996.