Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and/or manipulation of Neff by selective filling of radiation-induced traps at low temperatures

IEEE Transactions on Nuclear Science

Volumn 46, Issue 3 PART 1, 1999, Pages 221-227

  Dezillie, B ^a   Li, Z ^a   Eremin, V ^b   Bruzzi, M ^c   Pirollo, S ^c   Pandey, S U ^d   Li, C J ^e  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c Dipartimento di Energetica   (Italy)

^d WAYNE STATE UNIVERSITY   (United States)

^e INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

LOW RESISTIVITY STARTING MATERIAL; NEUTRON RADIATION HARDNESS; SPACE CHARGE CONCENTRATION; SPACE CHARGE REGION;

ANNEALING; COLLIDING BEAM ACCELERATORS; DIODES; ELECTRIC CONDUCTIVITY; ELECTRIC SPACE CHARGE; LOW TEMPERATURE PHENOMENA; MATHEMATICAL MODELS; NEUTRON IRRADIATION; RADIATION HARDENING; SEMICONDUCTING SILICON; SILICON WAFERS;

SILICON SENSORS;

EID: 0033339150     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.775518     Document Type: Article

References (20)

1. ATLAS Collaboration, Technical Proposal, CERN/LHCC/94-43, LHCC/P2 (1994).
2. th Pisa mtg., Frontier Detectors for Frontier Physics on Advanced Detectors, Elba, Italy, 22-28 May (1994), NIM A 360 (1995) 458.
3. nd Int. Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, March 4-6, 1998, to be published in NIM A (1999).
4. H. Feick, E. Fretwurst, G. Lindström, M. Moll, "Long term damage studies using silicon detectors fabricated from different starting materials and irradiated with neutrons, protons, and pions", NIM A 377 (1996) 217-223.
5. V. G. Palmieri et al., "Evidence for charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures", NIM A 413 (1998) 475-478.
6. nd Intern. Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices, Firenze, Italy, March 4-6, 1998, to be published in NIM A (1999).
7. R. Wunstorf, "Radiation Hardness of Silicon Detectors: Current Status", IEEE Trans. on Nucl. Sci. Vol 44, No 3, (1997).
8. H. Feick, "Radiation Tolerance of Silicon Particle Detectors for High-Energy Physics Experiments", DESY F35D-97-08 (1997).
9. Z. Li, "Resistivity measurements on the neutron irradiated detector grade silicon materials", Conference Proceedings Vol. 46, "Large Scale Applications and Radiation Hardness of Semiconductor Detectors", Firenze, 7-9 July 1993.
10. st Intern. Conference on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Firenze, 7-9 July 1993, p. 115-121.
11. U. Biggeri et al., "Hall effect measurements on proton-irradiated ROSE samples", NIM A 400 (1997) 113-123.
12. th Pisa mtg., Frontier Detectors for Frontier Physics on Advanced Detectors, Elba, Italy, 22-28 May (1994), NIM A 360 (1995) 458.
13. V. Eremin, Z. Li, "Determination of the Fermi Level Position for Neutron Irradiated High Resistivity Silicon Detectors and Material Using the Transient Charge Technique (TChT)", BNL 60072; IEEE Trans. Nucl. Sci. NS-41, No. 6 (1994) 1907.
14. S. M. Sze, "Physics of semiconductor devices", John Wiley & Sons, (1981).
15. B. R. Gossick, J. Appl. Phys., V.30, N8 (1959) 1214.
16. th Pisa meeting on Advanced Detectors, Elba, Italy, 22-281 May (1994), NIM A 360 (1995) 445.
17. Private communication with Dr. Mara Bruzzi, Univ. of Florence; TSC data to be published soon.
18. eff) in the space charge region of p-n junction detectors", NIM A 372 (1996) 388-398.
19. Z. Li and H. W. Kraner, "Modeling and simulation of charge collection properties for neutron irradiated silicon detectors", Nucl. Phys. B 32 (1993) 398-409.
20. Z. Li, C. J. Li, V. Eremin, E. Observation and Measurements of Neutron Induced Deep Levels Responsible for Neff Changes in High Resistivity Silicon Detectors Using TCT"; BNL 62981; NIM A 388 (1997) 297.