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1
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3343020688
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Development of high density readout for silicon strip detectors
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J. Walker, S. Parker, B. Hyams, and S. Shapiro, “Development of high density readout for silicon strip detectors”, Nucl. Instrum. Methods, vol. 226, pp. 200-203, 1984.
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Nucl. Instrum. Methods
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Walker, J.1
Parker, S.2
Hyams, B.3
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2
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0021617164
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Charge and interface state generation in field oxides
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H. Boesch Jr. and T. Taylor, “Charge and interface state generation in field oxides”, IEEE Trans. Nucl. Sci., vol. NS-31, pp. 1273-1279, 1984.
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IEEE Trans. Nucl. Sci.
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Boesch, H.1
Taylor, T.2
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3
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0000395740
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The time-dependence of post-irradiation interface trap build-up in deuterium annealed oxides
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Dec.
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N. Saks and R. Rendell, “The time-dependence of post-irradiation interface trap build-up in deuterium annealed oxides”, IEEE Trans. Nucl. Sci., vol. 39, pp. 2220-2229, Dec. 1992.
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IEEE Trans. Nucl. Sci.
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Saks, N.1
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4
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0001518203
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Relationship between oxide density and charge trapping in SiO films
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B. Mrstik, V. Afanas'ev, A. Stesmans, P. McMarr, and R. Lawrence, “Relationship between oxide density and charge trapping in SiO films”, J. Appl. Phys., vol. 85, pp. 6577-6588, 1999.
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Mrstik, B.1
Afanas'ev, V.2
Stesmans, A.3
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Lawrence, R.5
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5
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4244140181
-
Study of radiation effects on AC-coupled silicon strip detectors
-
D. Pitzl, N. Cartiglia, K. Clark, B. Hubbard, J. Leslie, K. O'Shaughnessy, W. Rowe, H. Sadrozinski, E. Spencer, H. Ziock, P. Ferguson, E. Milner, W. Sommer, and J. Ellison, “Study of radiation effects on AC-coupled silicon strip detectors”, Nucl. Phys. B (Proc. Suppl.), vol. 23A, pp. 340-346, 1991.
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(1991)
Nucl. Phys. B (Proc. Suppl.)
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, pp. 340-346
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-
Pitzl, D.1
Cartiglia, N.2
Clark, K.3
Hubbard, B.4
Leslie, J.5
O'Shaughnessy, K.6
Rowe, W.7
Sadrozinski, H.8
Spencer, E.9
Ziock, H.10
Ferguson, P.11
Milner, E.12
Sommer, W.13
Ellison, J.14
-
6
-
-
85008035792
-
-
Two papers from the early 90s and three later ones are given below.
-
D. Pitzl, N. Cartiglia, K. Clark, B. Hubbard, J. Leslie, K. O'Shaughnessy, W. Rowe, H. Sadrozinski, E. Spencer, H. Ziock, P. Ferguson, E. Milner, W. Sommer, and J. Ellison, More than a hundred papers have been published during the last thirty years on the bulk radiation damage of silicon detectors. Two papers from the early 90s and three later ones are given below.
-
More than a hundred papers have been published during the last thirty years on the bulk radiation damage of silicon detectors
-
-
Pitzl, D.1
Cartiglia, N.2
Clark, K.3
Hubbard, B.4
Leslie, J.5
O'Shaughnessy, K.6
Rowe, W.7
Sadrozinski, H.8
Spencer, E.9
Ziock, H.10
Ferguson, P.11
Milner, E.12
Sommer, W.13
Ellison, J.14
-
7
-
-
0026904556
-
Neutroninduced radiation damage in silicon detectors
-
F. Lemeilleur, M. Glaser, E. Heijne, P. Jarron, and E. Occelli, “Neutroninduced radiation damage in silicon detectors”, IEEE Trans. Nucl. Sci., vol. 39, pp. 551-557, 1992.
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(1992)
IEEE Trans. Nucl. Sci.
, vol.39
, pp. 551-557
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-
Lemeilleur, F.1
Glaser, M.2
Heijne, E.3
Jarron, P.4
Occelli, E.5
-
8
-
-
0001088332
-
Radiation damage by neutrons and photons to silicon detectors
-
K. Gill, G. Hall, S. Roe, S. Sotthibandhu, R. Wheadon, P. Giubellino, and L. Ramello, “Radiation damage by neutrons and photons to silicon detectors”, Nucl. Instrum. Methods, vol. A322, pp. 177-188, 1992.
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(1992)
Nucl. Instrum. Methods
, vol.A322
, pp. 177-188
-
-
Gill, K.1
Hall, G.2
Roe, S.3
Sotthibandhu, S.4
Wheadon, R.5
Giubellino, P.6
Ramello, L.7
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9
-
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0001397413
-
Radiation hardness of silicon detectors: Current status
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R. Wunstorf, “Radiation hardness of silicon detectors: Current status”, IEEE Trans. Nucl. Sci., vol. 44, pp. 806-814, 1997.
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IEEE Trans. Nucl. Sci.
, vol.44
, pp. 806-814
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Wunstorf, R.1
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10
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0031999099
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Systematic modeling and comparisons of capacitance and current-based microscopic defect analysis techniques for measurements of high-resistivity silicon detectors after irradiation
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Z. Li, “Systematic modeling and comparisons of capacitance and current-based microscopic defect analysis techniques for measurements of high-resistivity silicon detectors after irradiation”, Nucl. Instrum. Methods, vol. A 403, pp. 399-416, 1998.
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Nucl. Instrum. Methods
, vol.A 403
, pp. 399-416
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Li, Z.1
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11
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0032664879
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Radiation hardness of silicon detectors-a challenge from high-energy physics
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G. Lindstrom, M. Moll, and E. Fretwurst, “Radiation hardness of silicon detectors-a challenge from high-energy physics”, Nucl. Instrum. Methods, vol. A 426, pp. 1-15, 1999.
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Nucl. Instrum. Methods
, vol.A 426
, pp. 1-15
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Lindstrom, G.1
Moll, M.2
Fretwurst, E.3
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12
-
-
0027644411
-
Temperature dependence of radiation damage and its annealing in silicon detectors
-
H. Ziock, J. Boissevain, K. Holzscheiter, J. Kapustinsky, A. Palounek, W. Sondheim, E. Barberis, N. Cartiglia, J. Leslie, D. Pitzl, W. Rowe, H. Sadrozinski, A. Seiden, E. Spencer, J. Ellison, J. Fleming, S. Jerger, D. Joyce, C. Lietzke, E. Reed, S. Wimpenny, P. Ferguson, M. Frautschi, J. Matthews, and D. Skinner, “Temperature dependence of radiation damage and its annealing in silicon detectors”, IEEE Trans. Nucl. Sci., vol. 40, pp. 344-348, 1993.
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(1993)
IEEE Trans. Nucl. Sci.
, vol.40
, pp. 344-348
-
-
Ziock, H.1
Boissevain, J.2
Holzscheiter, K.3
Kapustinsky, J.4
Palounek, A.5
Sondheim, W.6
Barberis, E.7
Cartiglia, N.8
Leslie, J.9
Pitzl, D.10
Rowe, W.11
Sadrozinski, H.12
Seiden, A.13
Spencer, E.14
Ellison, J.15
Fleming, J.16
Jerger, S.17
Joyce, D.18
Lietzke, C.19
Reed, E.20
Wimpenny, S.21
Ferguson, P.22
Frautschi, M.23
Matthews, J.24
Skinner, D.25
more..
-
13
-
-
0028391944
-
Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors
-
H. Ziock, K. Holzscheiter, A. Morgan, A. Palounek, J. Ellison, A. Heinson, M. Mason, S. Wimpenny, E. Barberis, N. Cartiglia, A. Grillo, K. O'Shaughnessy, J. Rahn, P. Rinaldi, W. Rowe, H. Sadrozinski, A. Seiden, E. Spencer, A. Webster, R. Wichmann, M. Wilder, M. Frautschi, J. Matthews, D. McDonald, D. Skinner, D. Coupal, and T. Pal, “Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors”, Nucl. Instrum. Methods, vol. A 342, pp. 96-104, 1994.
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(1994)
Nucl. Instrum. Methods
, vol.A 342
, pp. 96-104
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-
Ziock, H.1
Holzscheiter, K.2
Morgan, A.3
Palounek, A.4
Ellison, J.5
Heinson, A.6
Mason, M.7
Wimpenny, S.8
Barberis, E.9
Cartiglia, N.10
Grillo, A.11
O'Shaughnessy, K.12
Rahn, J.13
Rinaldi, P.14
Rowe, W.15
Sadrozinski, H.16
Seiden, A.17
Spencer, E.18
Webster, A.19
Wichmann, R.20
Wilder, M.21
Frautschi, M.22
Matthews, J.23
McDonald, D.24
Skinner, D.25
Coupal, D.26
Pal, T.27
more..
-
14
-
-
0028400372
-
Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments
-
E. Fretwurst, H. Feick, M. Glaser, C. Gosslling, E. Heijne, A. Hess, F. Lemeilleur, G. Lindstrom, K. Mahlmann, A. Rolf, T. Schulz, and C. Soave, “Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments”, Nucl. Instrum. Methods, vol. A 342, pp. 119-125, 1994.
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(1994)
Nucl. Instrum. Methods
, vol.A 342
, pp. 119-125
-
-
Fretwurst, E.1
Feick, H.2
Glaser, M.3
Gosslling, C.4
Heijne, E.5
Hess, A.6
Lemeilleur, F.7
Lindstrom, G.8
Mahlmann, K.9
Rolf, A.10
Schulz, T.11
Soave, C.12
-
15
-
-
0000345915
-
Radiation studies and operational projections for silicon in the ATLAS inner detector
-
A. Chilingarov, H. Feick, E. Fretwurst, G. Lindstrom, S. Roe, and T. Schulz, “Radiation studies and operational projections for silicon in the ATLAS inner detector”, Nucl. Instrum. Methods, vol. A 360, pp. 432-437, 1995.
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(1995)
Nucl. Instrum. Methods
, vol.A 360
, pp. 432-437
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-
Chilingarov, A.1
Feick, H.2
Fretwurst, E.3
Lindstrom, G.4
Roe, S.5
Schulz, T.6
-
16
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-
0001478514
-
Bulk damage effects in irradiated silicon detectors due to clustered divacancies
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K. Gill, G. Hall, and B. MacEvoy, “Bulk damage effects in irradiated silicon detectors due to clustered divacancies”, J. Appl. Phys., vol. 82, pp. 126-136, 1997.
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J. Appl. Phys.
, vol.82
, pp. 126-136
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Gill, K.1
Hall, G.2
MacEvoy, B.3
-
17
-
-
0031120135
-
Study of charge collection and noise in nonirradiated and irradiated silicon detectors
-
C. Leroy, S. Bates, B. Dezillie, M. Glaser, F. Lemeilleur, and I. Trigger, “Study of charge collection and noise in nonirradiated and irradiated silicon detectors”, Nucl. Instrum. Methods, vol. A 388, pp. 289-296, 1997.
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(1997)
Nucl. Instrum. Methods
, vol.A 388
, pp. 289-296
-
-
Leroy, C.1
Bates, S.2
Dezillie, B.3
Glaser, M.4
Lemeilleur, F.5
Trigger, I.6
-
18
-
-
0032048432
-
Charge collection and noise analysis of heavily irradiated silicon detectors
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E. Borchi, M. Bruzzi, C. Leroy, S. Pirollo, and S. Sciortino, “Charge collection and noise analysis of heavily irradiated silicon detectors”, IEEE Trans. Nucl. Sci., vol. 45, pp. 141-145, 1998.
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IEEE Trans. Nucl. Sci.
, vol.45
, pp. 141-145
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Borchi, E.1
Bruzzi, M.2
Leroy, C.3
Pirollo, S.4
Sciortino, S.5
-
19
-
-
0032137142
-
Charge collection efficiency in heavily irradiated silicon diodes
-
L. Beattie, T. Brodbeck, A. Chilingarov, G. Hughes, P. Ratoff, and T. Sloan, “Charge collection efficiency in heavily irradiated silicon diodes”, Nucl. Instrum. Methods, vol. A 412, pp. 238-246, 1998.
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(1998)
Nucl. Instrum. Methods
, vol.A 412
, pp. 238-246
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-
Beattie, L.1
Brodbeck, T.2
Chilingarov, A.3
Hughes, G.4
Ratoff, P.5
Sloan, T.6
-
20
-
-
0033079870
-
Carrier lifetimes in heavily irradiated silicon diodes
-
L. Beattie, T. Brodbeck, A. Chilingarov, G. Hughes, S. McGarry, P. Ratoff, and T. Sloan, “Carrier lifetimes in heavily irradiated silicon diodes”, Nucl. Instrum. Methods, vol. A 421, pp. 502-511, 1999.
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Nucl. Instrum. Methods
, vol.A 421
, pp. 502-511
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Beattie, L.1
Brodbeck, T.2
Chilingarov, A.3
Hughes, G.4
McGarry, S.5
Ratoff, P.6
Sloan, T.7
-
21
-
-
0007644493
-
Radiation hardness studies of epitaxial silicon particle detectors for applications at the CERN Large Hadron Collider
-
pp. 153-162, University Joseph Fourier-Grenoble 1, Grenoble, France.
-
B. Dezillie, “Radiation hardness studies of epitaxial silicon particle detectors for applications at the CERN Large Hadron Collider”, Ph.D. dissertation, pp. 72-90, 153-162, University Joseph Fourier-Grenoble 1, Grenoble, France, 1997.
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(1997)
Ph.D. dissertation
, pp. 72-90
-
-
Dezillie, B.1
-
22
-
-
0032634852
-
Electrical characterization of standard and oxygenated irradiated ROSE diodes
-
V. Augelli, G. Contento, T. Ligonzo, M. Muscarella, L. Schiavulli, M. Angarano, D. Creanza, and M. De Palma, “Electrical characterization of standard and oxygenated irradiated ROSE diodes”, Nucl. Instrum. Methods, vol. A 426, pp. 81-86, 1999.
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(1999)
Nucl. Instrum. Methods
, vol.A 426
, pp. 81-86
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-
Augelli, V.1
Contento, G.2
Ligonzo, T.3
Muscarella, M.4
Schiavulli, L.5
Angarano, M.6
Creanza, D.7
De Palma, M.8
-
23
-
-
0032632271
-
Leakage current of hadron irradiated silicon detectors-material dependence
-
M. Moll, E. Fretwurst, and G. Lindstrom, “Leakage current of hadron irradiated silicon detectors-material dependence”, Nucl. Instrum. Methods, vol. A 426, pp. 87-93, 1999.
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(1999)
Nucl. Instrum. Methods
, vol.A 426
, pp. 87-93
-
-
Moll, M.1
Fretwurst, E.2
Lindstrom, G.3
-
24
-
-
0032636690
-
Studies of radiation hardness of oxygen enriched silicon detectors
-
A. Ruzin, G. Casse, M. Glaser, and F. Lemeilleur, “Studies of radiation hardness of oxygen enriched silicon detectors”, Nucl. Instrum. Methods, vol. A426, pp. 94-98, 1999.
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(1999)
Nucl. Instrum. Methods
, vol.A426
, pp. 94-98
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-
Ruzin, A.1
Casse, G.2
Glaser, M.3
Lemeilleur, F.4
-
25
-
-
85008023270
-
Radiation Effects in Silicon Detectors Processed on Carbon and Oxygen Rich Substrates
-
see also http://hep.ph.liv.ac.uk/~gcasse
-
A. Ruzin, G. Casse, M. Glaser, F. Lemeilleur, J. Matheson, S. Watts, and A. Zanet, “Radiation Effects in Silicon Detectors Processed on Carbon and Oxygen Rich Substrates”,, CERN RD-48 (ROSE) Collaboration; see also http://hep.ph.liv.ac.uk/~gcasse.
-
CERN RD-48 (ROSE) Collaboration
-
-
Ruzin, A.1
Casse, G.2
Glaser, M.3
Lemeilleur, F.4
Matheson, J.5
Watts, S.6
Zanet, A.7
-
26
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-
0031209562
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3-D-A proposed new architecture for solid-state radiation detectors
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S. Parker, C. Kenney, and J. Segal, “3-D-A proposed new architecture for solid-state radiation detectors”, Nucl. Instrum. Methods, vol. A 395, pp. 328-343, 1997.
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Nucl. Instrum. Methods
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Parker, S.1
Kenney, C.2
Segal, J.3
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0033311423
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Silicon detectors with 3-D electrode arrays: Fabrication and initial test results
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C. Kenney, S. Parker, J. Segal, and C. Storment, “Silicon detectors with 3-D electrode arrays: Fabrication and initial test results”, IEEE Trans. Nucl. Sci., vol. 46, pp. 1224-1236, 1999.
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Kenney, C.1
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28
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0035309527
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Observation of beta and x-rays with 3-D-architecture silicon microstrip sensors
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Apr.
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C. Kenney, S. Parker, B. Krieger, B. Ludewigt, T. Dubbs, and H. Sadrozinski, “Observation of beta and x-rays with 3-D-architecture silicon microstrip sensors”, IEEE Trans. Nucl. Sci., vol. 48, pp. 189-193, Apr. 2001.
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IEEE Trans. Nucl. Sci.
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Kenney, C.1
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Dubbs, T.5
Sadrozinski, H.6
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30
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85008061499
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Charge compensation in irradiated semiconductor devices using high-resistivity field plates
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to be published.
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S. Parker and C. Kenney, “Charge compensation in irradiated semiconductor devices using high-resistivity field plates”, Nucl. Instrum. Methods, to be published.
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Nucl. Instrum. Methods
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Parker, S.1
Kenney, C.2
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0027844647
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Damage correlations in semiconductors exposed to gamma, electron and proton radiations
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Pion induced displacement damage in silicon devices
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M. Huhtinen and P. Aarnio, “Pion induced displacement damage in silicon devices”, Nucl. Instrum. Methods, vol. A 335, pp. 580-582, 1993.
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Nucl. Instrum. Methods
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Aarnio, P.2
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33
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Damage induced by pions in silicon detectors
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S. Bates, C. Furetta, M. Glaser, F. Lemeilleur, C. Soave, and E. LeonFlorian, “Damage induced by pions in silicon detectors”, Nucl. Phys. B (Proc. Suppl.), vol. 44, pp. 510-519, 1995.
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34
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Comparison of radiation damage in silicon detectors induced by pions, protons and neutrons
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U. Biggeri, E. Borchi, M. Bruzzi, A. Candelori, and A. Giraldo, “Comparison of radiation damage in silicon detectors induced by pions, protons and neutrons”, Il Nuovo Cimento, vol. 109 A, pp. 1351-1358, 1996.
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Biggeri, U.1
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35
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Long term damage studies using silicon detectors fabricated from different starting materials and irradiated with neutrons, protons and pions
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H. Feick, E. Fretwurst, G. Lindstrom, and M. Moll, “Long term damage studies using silicon detectors fabricated from different starting materials and irradiated with neutrons, protons and pions”, Nucl. Instrum. Methods, vol. A 377, pp. 217-223, 1996.
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Nucl. Instrum. Methods
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Feick, H.1
Fretwurst, E.2
Lindstrom, G.3
Moll, M.4
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36
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0030245010
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Pion-induced damage in silicon detectors
-
S. Bates, C. Furetta, M. Glaser, F. Lemeilleur, E. Leon-Florian, C. Gossling, B. Kaiser, A. Rolf, R. Wunstorf, H. Feick, E. Fretwurst, G. Lindstrom, M. Moll, G. Taylor, and A. Chilingarov, “Pion-induced damage in silicon detectors”, Nucl. Instrum. Methods, vol. A 379, pp. 116-123, 1996.
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(1996)
Nucl. Instrum. Methods
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Bates, S.1
Furetta, C.2
Glaser, M.3
Lemeilleur, F.4
Leon-Florian, E.5
Gossling, C.6
Kaiser, B.7
Rolf, A.8
Wunstorf, R.9
Feick, H.10
Fretwurst, E.11
Lindstrom, G.12
Moll, M.13
Taylor, G.14
Chilingarov, A.15
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37
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0031125057
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Non-ionising energy loss of pions in thin silicon samples
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Commparison of radiation damage in silicon induced by proton and neutron irradiation
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A. Ruzin, G. Casse, M. Glaser, A. Zanet, F. Lemeilleur, and S. Watts, “Commparison of radiation damage in silicon induced by proton and neutron irradiation”, IEEE Trans. Nucl. Sci., vol. 46, pp. 1310-13, 1999.
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Biasdependent radiation damage in high-resistivity silicon diodes irradiated with heavy charged particles
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Atlas Preprint ATLINDET 99-010, Aug., submitted for publication.
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V. Cindro, G. Kramberger, M. Mikuz, M. Tadel, and D. Zontar, “Biasdependent radiation damage in high-resistivity silicon diodes irradiated with heavy charged particles”, Elsevier Preprint, Atlas Preprint ATLINDET 99-010, Aug. 1999, submitted for publication.
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(1999)
Elsevier Preprint
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Cindro, V.1
Kramberger, G.2
Mikuz, M.3
Tadel, M.4
Zontar, D.5
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