Low- and high-energy proton irradiations of standard and oxygenated silicon diodes

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2270-2277

  Candelori, A ^a,b   Rando, R ^b   Bisello, D ^a,b   Bacchetta, N ^b   Kaminski, A ^b   Pantano, D ^b   Stavitski, I ^b   Wyss, J ^c,d  

^a IEEE   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

^c UNIVERSITY OF CASSINO AND SOUTHERN LAZIO   (Italy)

^d INFN SEZIONE DI PISA   (Italy)

Author keywords

Proton radiation effects; Radiation detectors; Semiconductor diodes

Indexed keywords

OXYGENATED SILICON DIODES;

ANNEALING; LEAKAGE CURRENTS; PROTON IRRADIATION; RADIATION DETECTORS; RADIATION EFFECTS;

SEMICONDUCTOR DIODES;

EID: 0035723280     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983206     Document Type: Conference Paper

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