Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum

Nuclear Physics B - Proceedings Supplements

Volumn 78, Issue 1-3, 1999, Pages 645-649

  Ruzin, A ^a   Casse, G ^b   Glaser, M ^a   Lemeilleur, F ^a   Talamonti, R ^a   Watts, S ^c   Zanet, A ^d  

^a CERN   (Switzerland)

^b CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^c BRUNEL UNIVERSITY   (United Kingdom)

^d UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033177307     PISSN: 09205632     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0920-5632(99)00618-0     Document Type: Article

References (5)

1. B. C. MacEvoy, G. Hall, K. Gill, "Defect evolution in irradiated silicon detector material", Nucl. Instr. and Meth. A 374 (1996) 12-26.
2. 60Co-gammas in high resistivity silicon detectors using deep-level transient spectroscopy", Nucl. Instr. and Meth. A 388 (1997) 335-339.
3. TRIGA reactor at Jozef Stefan Institute, Ljubljana, Slovenia.
4. rd ROSE Workshop, DESY Hamburg, February 1998.
5. Geoffrey P. Summers, Edward A. Burke, Philip Shapiro, Scott R. Messenger, Robert J. Walters, "Damage correlations in semiconductors exposed to gamma, electron and proton radiations", IEEE Trans. Nucl. Sci. Vol. 40, 1993.