Developments for radiation hard silicon detectors by defect engineering - Results by the CERN RD48 (ROSE) Collaboration

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 465, Issue 1, 2001, Pages 60-69

  Lindstrom G ^a   Ahmed, M ^b   Albergo, S ^c   Allport, P ^d   Anderson, D ^e   Andricek, L ^f   Angarano, M M ^g   Augelli, V ^h   Bacchetta, N ⁱ   Bartalini, P ^g   Bates, R ⁱ   Biggeri, U ^k   Bilei, G M ^g   Bisello, D ^j   Boemi, D ^c   Borchi, E ^k   Botila, T ^l   Brodbeck, T J ^m   Bruzzi, M ^k   Budzynski, T ⁿ   Burger, P ^o   Campabadal, F ^p,q   Casse, G ^d   Catacchini, E ^k   Chilingarov, A ^m   Ciampolini, P ^g   Cindro, V ^r   Costa, M J ^p,q   Creanza, D ^h   Clauws, P ^s   Da Via, C ^b   Davies, G ^t   De Boer, W ^u   Dell'orso R ^v   De Palma, M ^h   Dezillie, B ^w   Eremin, V ^x   Evrard, O ^o   Fallica, G ^y   Fanourakis, G ^z   Feick, H ^aa   Focardi, E ^k   Fonseca, L ^p,q   Fretwurst, E ^a   Fuster, J ^p,q   Gabathuler, K ^ab   Glaser, M ^ac   Grabiec, P ⁿ   Grigoriev, E ^u   Hall, G ^ad   Hanlon, M ^d   Hauler, F ^u   Heising, S ^u   Holmes Siedle, A ^b   Horisberger, R ^ab   Hughes, G ^m   Huhtinen, M ^ac   Ilyashenko, I ^x   Ivanov, A ^x   Jones, B K ^m   Jungermann, L ^u   Kaminsky, A ⁱ   Kohout, Z ^ae   Kramberger, G ^r   Kuhnke, M ^a   Kwan, S ^e   Lemeilleur, F ^ac   Leroy, C ^aq   Letheren, M ^ac   Li, Z ^w   Ligonzo, T ^h   Linhart, V ^ae   Litovchenko, P ^ag   Loukas, D ^z   Lozano, M ^p,q   Luczynski, Z ⁿ   Lutz, G ^f   Macevoy, B ^ad   Manolopoulos, S ^j   Markou, A ^z   Martinez, C ^p,q   Messineo, A ^v   Miku, M ^r   Moll, M ^ac   Nossarzewska, E ⁿ   Ottaviani, G ^ah   Oshea, V ^j   Parrini, G ^k   Passeri, D ^g   Petre, D ^l   Pickford, A ^j   Pintilie, I ^l   Pintilie, L ^l   Pospisil, S ^ae   Potenza, R ^c   Radicci, V ^h   Raine, C ^j   Rafi, J M ^p,q   Ratoff, P N ^m   Richter, R H ^f   Riedler, P ^ac   Roe, S ^ac   Roy, P ^af   Ruzin, A ^ai   Ryazanov, A I ^aj   Santocchia, A ^ad   Schiavulli, L ^h   Sicho, P ^ak   Siotis, I ^z   Sloan, T ^m   Slysz, W ⁿ   Smith, K ^j   Solanky, M ^b   Sopko, B ^ae   Stolze, K ^al   Sundby Avset, B ^am   Svensson, B ^an   Tivarus, C ^l   Tonelli, G ^v   Tricomi, A ^c   Tzamarias, S ^z   Valvo, G ^y   Vasilescu, A ^ao   Vayaki, A ^z   Verbitskaya, E ^x   Verdini, P ^v   Vrba, V ^ak   Watts, S ^b   Weber, E R ^aa   Wegrzecki, M ⁿ   Wegrzecka, I ⁿ   Weilhammer, P ^ac   Wheadon, R ^v   Wilburn, C ^ap   Wilhelm, I ^aq   Wunstorf, R ^ar   Wustenfeld J ^ar   Wyss, J ⁱ   Zankel, K ^ac   Zabierowski, P ⁿ   Zontar, D ^q   more..

^a UNIVERSITY OF HAMBURG   (Germany)

^b BRUNEL UNIVERSITY   (United Kingdom)

^c UNIVERSITY OF CATANIA   (Italy)

^d UNIVERSITY OF LIVERPOOL   (United Kingdom)

^e FERMI NATIONAL ACCELERATOR LABORATORY   (United States)

^f MAX PLANCK INSTITUTE   (Germany)

^g UNIVERSITY OF PERUGIA   (Italy)

^h INFN SEZIONE DI BARI   (Italy)

ⁱ UNIVERSITY OF PADOVA   (Italy)

^j UNIVERSITY OF GLASGOW   (United Kingdom)

^k UNIVERSITY OF FLORENCE   (Italy)

^l NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

^m LANCASTER UNIVERSITY   (United Kingdom)

ⁿ Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^o Canberra Semiconductor NV   (Belgium)

^p INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^q INSTITUTO DE FÍSICA CORPUSCULAR IFIC   (Spain)

^r UNIVERSITY OF LJUBLJANA   (Slovenia)

^s GHENT UNIVERSITY   (Belgium)

^t KING'S COLLEGE LONDON   (United Kingdom)

^u UNIVERSITY OF KARLSRUHE   (Germany)

^v INFN SEZIONE DI PISA   (Italy)

^w BROOKHAVEN NATIONAL LABORATORY   (United States)

^x IOFFE INSTITUTE   (Russian Federation)

^y STMICROELECTRONICS   (Italy)

^z Demokritos   (Greece)

^aa Lawrence Berkeley National Laboratory   (United States)

^ab PAUL SCHERRER INSTITUTE   (Switzerland)

^ac CERN   (Switzerland)

^ad IMPERIAL COLLEGE LONDON   (United Kingdom)

^ae CZECH TECHNICAL UNIVERSITY IN PRAGUE   (Czech Republic)

^af UNIVERSITÉ DE MONTRÉAL   (Canada)

^ag INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^ah UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^ai TEL AVIV UNIVERSITY   (Israel)

^aj KURCHATOV INSTITUTE   (Russian Federation)

^ak INSTITUTE OF PHYSICS   (Czech Republic)

^al CiS Institut fur Mikrosensorik gGmbH   (Germany)

^am SINTEF   (Norway)

^an ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^ao HORIA HULUBEI NATIONAL INSTITUTE OF PHYSICS AND NUCLEAR ENGINEERING   (Romania)

^ap BN15 8UN   (United Kingdom)

^aq CHARLES UNIVERSITY   (Czech Republic)

^ar TU DORTMUND UNIVERSITY   (Germany)

more..

Author keywords

Annealing studies; Consequences for high energy physics applications; Gamma , neutron , proton and pion irradiation; Improved radiation tolerance by oxygen enrichment; Silicon detectors

Indexed keywords

ANNEALING; GAMMA RAYS; HIGH ENERGY PHYSICS; NEUTRON IRRADIATION; OXYGEN; PROTON IRRADIATION; SILICON SENSORS;

SILICON DETECTORS;

PARTICLE DETECTORS;

EID: 0035367254     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)00347-3     Document Type: Article

References (32)

1. RD48, Radiation hard silicon detectors - Developments by the RD48(ROSE) Collaboration
2. A comparative study of oxygenated and un-oxygenated Si-diodes, miniature and large area microstrip detectors
3. Bias Dependence and bistability of radiation defects in silicon
4. HTLT oxygenated silicon detectors: Radiation hardness and long term stability
5. A new method of carrier trapping time measurements