Low-Temperature Growth of InN Films on (111)GaAs Substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 5 PART 2, 1999, Pages 490-491

  Guo, Qixin ^a   Nishio, Mitsuhiro ^a   Ogawa, Hiroshi ^a   Yoshida, Akira ^b  

^a SAGA UNIVERSITY   (Japan)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

GaAs substrate; InN; Low temperature growth; Reactive sputtering

Indexed keywords

EID: 0001218596     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l490     Document Type: Article

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