High power applications for GaN-based devices

Solid-State Electronics

Volumn 41, Issue 10, 1997, Pages 1561-1567

  Trew, R J ^a   Shin, M W ^a   Gatto, V ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ENERGY GAP; MICROWAVE AMPLIFIERS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

POWER MODULES;

FIELD EFFECT TRANSISTORS;

EID: 0031247862     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00105-6     Document Type: Article

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