Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1237-1243

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Dang, G ^b   Zhang, A P ^b   Ren, F ^b   Cao, X A ^c   Pearton, S J ^c   Wilson, R G ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b University of Florida   (United States)

^c UNIVERSITY OF FLORIDA   (United States)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RECTIFIERS; FERMI LEVEL; NITRIDES; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM NITRIDE; HIGH-POWER RECTIFIERS; MICROCATHODOLUMINESCENCE; PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS); THERMALLY STIMULATED CURRENT (TSC) MEASUREMENT;

SEMICONDUCTING FILMS;

EID: 0034187698     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591368     Document Type: Article

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