Enhanced hole trapping in MOS devices damaged by plasma-induced charging

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 365-368

  Brozek, Tomasz ^a   Chan, Y David ^b   Viswanathan, Chand R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE TRAPPING; PLASMA-INDUCED;

EID: 84920738657     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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3. X. Li et al., J. Vac. Sei. Tech. (B), vol. 14, No. 1, 571 (1996).
4. T. Brozek and C. R. Viswanathan, Appl. Phys Lett., vol. 68, No.13, (1996).
5. J. F. Varwey, J. Appl. Phys., vol. 44, 2681 (1973).