Interface state creation due to low-field latent damage depassivation

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 2000, Pages 93-96

  Pantisano, Luigi ^a   Paccagnella, A ^a   Cellere, G ^a   Colombo, P ^a   Valentini, M G ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); MATERIALS TESTING; PASSIVATION;

CONSTANT CURRENT STRESS; INTERFACE STATE DENSITY; LOW FIELD LATENT DAMAGE DEPASSIVATION; STRESS POLARITY;

PLASMA APPLICATIONS;

EID: 0034505577     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)