Threshold voltage degradation in plasma-damaged CMOS transistors - Role of electron and hole traps related to charging damage

Microelectronics Reliability

Volumn 36, Issue 11-12 SPEC. ISS., 1996, Pages 1627-1630

  Brozek, Tomasz ^a   Chan, Y David ^b   Viswanathan, Chand R ^a  

^a Engineering IV   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; PLASMAS; SEMICONDUCTOR DEVICE MODELS; TRANSISTORS; CARRIER CONCENTRATION; ELECTRIC CHARGE; MATHEMATICAL MODELS; STRESSES;

ELECTRON/HOLE TRAPS; FOWLER-NORDHEIM STRESSES; PLASMA INDUCED DAMAGE; THRESHOLD VOLTAGE DEGRADATION; FOWLER NORDHEIM STRESS;

CMOS INTEGRATED CIRCUITS;

EID: 0030273977     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(96)00161-8     Document Type: Article

References (7)

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