-
1
-
-
0002070177
-
How plasma etching damage thin gate oxide
-
June
-
C. Gabriel and J. McVittie, "How plasma etching damage thin gate oxide," Solid-State Technol., pp. 81-87, June 1992.
-
(1992)
Solid-State Technol.
, pp. 81-87
-
-
Gabriel, C.1
McVittie, J.2
-
2
-
-
0026203864
-
Thin oxide charging current during plasma etching of aluminum
-
H. Shin, C. C. King, T. Horiuchi, and C. Hu, "Thin oxide charging current during plasma etching of aluminum," IEEE Electron Device Lett., vol. 12, pp. 404-406, 1991.
-
(1991)
IEEE Electron Device Lett.
, vol.12
, pp. 404-406
-
-
Shin, H.1
King, C.C.2
Horiuchi, T.3
Hu, C.4
-
3
-
-
0028257884
-
The effect of plasma-induced oxide and interface degradation on hot-carrier reliability
-
K. Noguchi and K. Okumura, "The effect of plasma-induced oxide and interface degradation on hot-carrier reliability," in Proc. Int. Reliab. Phys. Symp., 1994, pp. 232-237.
-
(1994)
Proc. Int. Reliab. Phys. Symp.
, pp. 232-237
-
-
Noguchi, K.1
Okumura, K.2
-
4
-
-
5844386170
-
Correlation of antenna charging and gate oxide reliability
-
May/June
-
C. Gabriel and S. Nariani, "Correlation of antenna charging and gate oxide reliability," J. Vac. Sci. Techol. A, vol. 14, no. 3, May/June, 1996.
-
(1996)
J. Vac. Sci. Techol. A
, vol.14
, Issue.3
-
-
Gabriel, C.1
Nariani, S.2
-
5
-
-
0029322184
-
Charging damage from plasma enhanced TEOS deposition
-
K. Cheung and C. Pai, "Charging damage from plasma enhanced TEOS deposition," IEEE Electron Device Lett., vol. 16, pp. 220-222, 1995.
-
(1995)
IEEE Electron Device Lett.
, vol.16
, pp. 220-222
-
-
Cheung, K.1
Pai, C.2
-
6
-
-
0043255687
-
Plasma etching charge-up damage to thin oxide
-
Aug.
-
H. Shin, N. Jha, X. Qian, G. Hills, and C. Hu, "Plasma etching charge-up damage to thin oxide," Solid-Stare Technol., pp. 29-36, Aug. 1993.
-
(1993)
Solid-Stare Technol.
, pp. 29-36
-
-
Shin, H.1
Jha, N.2
Qian, X.3
Hills, G.4
Hu, C.5
-
7
-
-
0027186745
-
Process induced oxide damage and its implications to device reliability of submicron transistors
-
R. Rakkhit, F. Heiler, P. Fang, and C. Sander, "Process induced oxide damage and its implications to device reliability of submicron transistors," in Proc. Int. Reliab. Phys. Symp., 1993, pp. 293-296.
-
(1993)
Proc. Int. Reliab. Phys. Symp.
, pp. 293-296
-
-
Rakkhit, R.1
Heiler, F.2
Fang, P.3
Sander, C.4
-
8
-
-
3643064024
-
Plasma-damaged oxide reliability study correlating both hot-carrier injection and time-dependent dielectric breakdown
-
X. Li, J. Hsu, P. Aum, Y. D. Chan, J. Rembetski, and C. R. Viswanathan, "Plasma-damaged oxide reliability study correlating both hot-carrier injection and time-dependent dielectric breakdown," IEEE Electron Device Lett., vol. 14, pp. 91-93, 1993.
-
(1993)
IEEE Electron Device Lett.
, vol.14
, pp. 91-93
-
-
Li, X.1
Hsu, J.2
Aum, P.3
Chan, Y.D.4
Rembetski, J.5
Viswanathan, C.R.6
-
9
-
-
0030243349
-
Hole trap generation in the gate oxide due to plasma-induced charging
-
T. Brozek, Y. D. Chan, and C. Viswanathan, "Hole trap generation in the gate oxide due to plasma-induced charging," IEEE Electron Device Lett., vol. 17, pp. 440-442, 1996.
-
(1996)
IEEE Electron Device Lett.
, vol.17
, pp. 440-442
-
-
Brozek, T.1
Chan, Y.D.2
Viswanathan, C.3
-
10
-
-
0028531198
-
Postive oxide charge generation during 0.25-μm PMOSFET hot-carrier degradation
-
R. Woltjer, G. Paulzen, H. Lifka, and P. Woerlee, "Postive oxide charge generation during 0.25-μm PMOSFET hot-carrier degradation," IEEE Electron Device Lett., vol. 15, pp. 427-429, 1994.
-
(1994)
IEEE Electron Device Lett.
, vol.15
, pp. 427-429
-
-
Woltjer, R.1
Paulzen, G.2
Lifka, H.3
Woerlee, P.4
-
11
-
-
0024627110
-
Degradation due to hole trapping in flash memory cells
-
S. Haddad, C. Chang, B. Swaminathan, and L. Lien, "Degradation due to hole trapping in flash memory cells," IEEE Electron Device Lett., vol. 10, pp. 117-119, 1989.
-
(1989)
IEEE Electron Device Lett.
, vol.10
, pp. 117-119
-
-
Haddad, S.1
Chang, C.2
Swaminathan, B.3
Lien, L.4
-
13
-
-
0028523978
-
Charge build-up and oxide wear-out during Fowler-Nordheim electron injection in irridated MOS structures
-
T. Brozek and A. Jakubowski, "Charge build-up and oxide wear-out during Fowler-Nordheim electron injection in irridated MOS structures," Microelectron. J., vol. 25, pp. 507-514, 1994.
-
(1994)
Microelectron. J.
, vol.25
, pp. 507-514
-
-
Brozek, T.1
Jakubowski, A.2
|