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Volumn 18, Issue 11, 1997, Pages 532-534

Total dose radiation response of plasma-damaged NMOS devices

Author keywords

[No Author keywords available]

Indexed keywords

PLASMA APPLICATIONS; RADIATION EFFECTS; X RAYS;

EID: 0031274778     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.641436     Document Type: Article
Times cited : (1)

References (13)
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  • 2
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    • Noguchi, K.1    Okumura, K.2
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    • C. Gabriel and S. Nariani, "Correlation of antenna charging and gate oxide reliability," J. Vac. Sci. Techol. A, vol. 14, no. 3, May/June, 1996.
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    • Gabriel, C.1    Nariani, S.2
  • 5
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    • R. Rakkhit, F. Heiler, P. Fang, and C. Sander, "Process induced oxide damage and its implications to device reliability of submicron transistors," in Proc. Int. Reliab. Phys. Symp., 1993, pp. 293-296.
    • (1993) Proc. Int. Reliab. Phys. Symp. , pp. 293-296
    • Rakkhit, R.1    Heiler, F.2    Fang, P.3    Sander, C.4
  • 8
    • 3643064024 scopus 로고
    • Plasma-damaged oxide reliability study correlating both hot-carrier injection and time-dependent dielectric breakdown
    • X. Li, J. Hsu, P. Aum, Y. D. Chan, J. Rembetski, and C. R. Viswanathan, "Plasma-damaged oxide reliability study correlating both hot-carrier injection and time-dependent dielectric breakdown," IEEE Electron Device Lett., vol. 14, pp. 91-93, 1993.
    • (1993) IEEE Electron Device Lett. , vol.14 , pp. 91-93
    • Li, X.1    Hsu, J.2    Aum, P.3    Chan, Y.D.4    Rembetski, J.5    Viswanathan, C.R.6
  • 9
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  • 10
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    • R. Woltjer, G. Paulzen, H. Lifka, and P. Woerlee, "Postive oxide charge generation during 0.25-μm PMOSFET hot-carrier degradation," IEEE Electron Device Lett., vol. 15, pp. 427-429, 1994.
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  • 13
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.