Stress induced leakage current under pulsed voltage stress

Solid-State Electronics

Volumn 46, Issue 3, 2002, Pages 399-405

  Cester, A ^a   Paccagnella, A ^a   Ghidini, G ^b  

^a UNIVERSITY OF PADOVA   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Dynamic stress; Integrated circuit reliability; MOS devices; Pulsed voltage stress; Semiconductor devices reliability; SILC; Silicon material devices

Indexed keywords

ELECTRIC POTENTIAL; GROWTH KINETICS; LEAKAGE CURRENTS; STRESS ANALYSIS;

CONSTANT VOLTAGE STRESS (CVS); PULSED VOLTAGE STRESS (PVS);

MOS DEVICES;

EID: 0036498141     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00121-6     Document Type: Article

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