Characterization of the hot-electron-induced degradation in thin SiO2 gate oxides

Microelectronics Reliability

Volumn 38, Issue 2, 1998, Pages 201-211

  Cartier, E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; HOT CARRIERS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SILICA; STRESSES; THIN FILMS;

HOT-ELECTRON-INDUCED DEGRADATION;

MICROELECTRONICS;

EID: 0031995336     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00168-6     Document Type: Article

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