Quantitative analysis of stress induced excess current (SIEC) in SiO2 films

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1996, Pages 100-107

  Sakakibara, Kiyohiko ^a   Ajika, Natsuo ^a   Hatanaka, Masahiro ^a   Miyoshi, Hirokazu ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; LEAKAGE CURRENTS; MOS DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR STORAGE; STRESS ANALYSIS; STRESSES;

LOCAL NEUTRAL TRAP DENSITY; STRESS INDUCED EXCESS CURRENT;

SILICA;

EID: 0029708612     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)