High temperature characteristics of nearly 1.2 μm GaInAs/GaAs/AlGaAs lasers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 10 B, 1999, Pages

  Chen, Zhibiao ^a   Schlenker, Dietmar ^a   Miyamoto, Tomoyuki ^a   Kondo, Takashi ^a   Kawaguchi, Masao ^a   Koyama, Fumio ^a   Iga, Kenichi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HIGH TEMPERATURE EFFECTS; HIGH TEMPERATURE PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM ARSENIDE;

QUANTUM WELL LASERS;

EID: 0033311901     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1178     Document Type: Article

References (7)

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