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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volumn 41, Issue 1, 2002, Pages 227-231
Influences of point and extended defects on as diffusion in Si
(5)
Kim, Ryangsu
a
Hirose, Tetsuya
a
Shano, Toshihumi
a
Tsuji, Hiroshi
a
Taniguchi, Kenji
a
a
OSAKA UNIVERSITY
(
Japan
)
Author keywords
Arsenic; End of range dislocation loop; Interstitial; Vacancy; 311 defect
Indexed keywords
ANNEALING; ARSENIC; DEFECTS; DIFFUSION; DOPING (ADDITIVES); ION IMPLANTATION; IONS; SEGREGATION (METALLOGRAPHY);
POINT AND EXTENDED DEFECTS; TRANSIENT ENHANCED DIFFUSION (TED);
SILICON WAFERS;
EID
:
0036310063
PISSN
:
00214922
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1143/JJAP.41.227
Document Type
:
Article
Times cited : (
14
)
References (
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