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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 8 PART A, 1998, Pages

Boron accumulation in the {311} defect region induced by self-implantation into silicon substrate

(5) Xia, Jianxin a Saito, Tomoya a Aoki, Takenori a Kamakura, Yoshinari a Taniguchi, Kenji a

a OSAKA UNIVERSITY (Japan)

Author keywords

Annealing; Boron; Diffusion; Implantation; Segregation; Silicon; 311 defect

Indexed keywords

ANNEALING; BORON; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; ION IMPLANTATION; THERMAL EFFECTS;

PILE-UP PHENOMENON;

SILICON WAFERS;

EID: 0032135907 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.l913 Document Type: Article

Times cited : (3)

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