An approach using a subamorphizing threshold dose silicon implant of optimal energy to achieve shallower junctions

Journal of Applied Physics

Volumn 83, Issue 12, 1998, Pages 8046-8050

  Sultan, Akif ^a   Banerjee, Sanjay ^a   List, Scott ^b   McNeil, Vincent ^b  

^a The University of Texas at Austin   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11644283390     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367897     Document Type: Article

References (5)

1. M. Kase, M. Kimura, H. Mori, and T. Ogawa, Appl. Phys. Lett. 56, 1231 (1990).
2. A. Sultan, S. List, and V. McNeil, patent application filed by Texas Instruments, 1996.
3. A. M. Mazzone, Phys. Status Solidi A 95, 149 (1986).
4. TMA TSUPREM-III User's Manual, Technology Modeling Associates. Plo Alto, CA.
5. J. F. Gibbons, W. S. Johnson, and S. W. Mylroie, Projected Range Statistics, Semiconductors and Related Material (Halsted, 1975).