Effect of arsenic doping on {311} defect dissolution in silicon

Applied Physics Letters

Volumn 75, Issue 2, 1999, Pages 229-231

  Brindos, Richard ^a   Keys, Patrick ^a   Jones, Kevin S ^a   Law, Mark E ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000574933     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124331     Document Type: Article

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