Optimized subamorphizing silicon implants to modify diffusion and activation of arsenic, boron, and phosphorus implants for shallow junction creation

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3494-3498

  Aronowitz, S ^a   Puchner, H ^a   Kimball, J ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009782637     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369707     Document Type: Article

References (6)

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