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Journal of Applied Physics

Volumn 85, Issue 11, 1999, Pages 7597-7603

Boron segregation to extended defects induced by self-ion implantation into silicon

(6) Xia, Jianxin a Saito, Tomoya a Kim, Ryangsu a Aoki, Takenori a Kamakura, Yoshinari a Taniguchi, Kenji a

a OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000970141 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.370560 Document Type: Article

Times cited : (30)

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