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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2319-2323

Studies of boron segregation to {311} defects in silicon-implanted silicon

(6) Xia, Jianxin a Saito, Tomoya a Kim, Ryangsu a Aoki, Takenori a Kamakura, Yoshinari a Taniguchi, Kenji a

a OSAKA UNIVERSITY (Japan)

Author keywords

Boron; Diffusion; Implantation; Interstitial; Segregation; Silicon; 311 defect

Indexed keywords

EID: 0000250481 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.2319 Document Type: Article

Times cited : (3)

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