Secondary defects in low-energy As-implanted Si

Applied Physics A: Materials Science and Processing

Volumn 66, Issue 4, 1998, Pages 373-384

  Tamura, M ^a   Hiroyama, Y ^a   Nishida, A ^b   Horiuchi, M ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; ARSENIC; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; DISSOLUTION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; RADIATION DAMAGE;

ISOCHRONAL ANNEALING; ISOTHERMAL ANNEALING;

SEMICONDUCTING SILICON;

EID: 0032049703     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050681     Document Type: Article

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