Anomalous phosphorus diffusion in Si during postimplantation annealing

Applied Physics Letters

Volumn 78, Issue 24, 2001, Pages 3818-3820

  Kim, Ryangsu ^a   Furuta, Yoshikazu ^a   Hayashi, Syunsuke ^a   Hirose, Tetsuya ^a   Shano, Toshihumi ^a   Tsuji, Hiroshi ^a   Taniguchi, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035844482     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1379359     Document Type: Article

References (12)

1. D. K. Sadana, A. Acovic, B. Davari, D. Grutzmacher, H. Hanafi, and F. Cardone, Appl. Phys. Lett. 61, 3038 (1992).
2. K. Uwasawa, T. Uchida, T. Ikezawa, M. Hane, T. Matsuki, H. Kato, and K. Ishida, Tech. Dig. Int. Electron Devices Meet. 1994, 873 (1994).
3. R. D. Chang, P. S. Choi, D. L. Kwong, D. Wristers, and P. K. Chi, Appl. Phys. Lett. 72, 1709 (1998).
4. H. S. Chao, P. B. Griffin, and J. D. Plummer. Mater. Res. Soc. Symp. Proc. 469, 347 (1997).
5. K. Imai, S. Shishiguchi, K. Yamaguchi, N. Kimizuka, H. Onishi, and T. Horiuchi, Proc. of Symp. on VLSI Tech. 1999. p. 94.
6. M. E. Law and J. R. Pfiester, IEEE Trans. Electron Devices 38, 39 (1991).
7. S. Solmi and P. Maccagnani, J. Appl. Phys. 74, 5005 (1993).
8. M. Tamura, Y. Hiroyama, A. Nishida, and M. Horiuchi, Appl. Phys. A: Mater. Sci. Process. 66, 373 (1998).
9. S. Solmi, F. Cembali, R. Fabhri, M. Servidori, and R. Canteri, Appl. Phys. A: Solids Surf. 48, 255 (1989).
10. P. M. Fahey, P B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
11. Y. M. Haddara, B. T. Folmer, M. E. Law, and T. Buyuklimanli, Appl. Phys. Lett. 77, 1976 (2000).
12. D. W. Yergeau, E. C. Kan, M. J. Gander, and R. W. Dutton, Simulation of Semiconductor Devices and Processes, Proceedings of the Sixth International Conference, edited by H. Ryssel and P. Pichlee (Springer, New York, 1995). Vol. 6, pp. 66-69.