Evolution of the growth stress, stiffness, and microstructure of alumina thin films during vapor deposition

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 204-216

  Proost, Joris ^a   Spaepen, Frans ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION POROSIMETRY; ALUMINA THIN FILMS; AMORPHOUS ALUMINA; ANALYTICAL EXPRESSIONS; AVERAGE GROWTH; AVERAGE RATE; BIAXIAL MODULUS; CONSTANT RATIO; CURVATURE MEASUREMENT; CYLINDRICAL PORES; DEPOSITION TEMPERATURES; ELECTRON BEAM EVAPORATION; EX SITU; EX SITU ANALYSIS; FILMS THINNER; GROWTH STRESS; IN-SITU; ISLAND GROWTH; ISLAND GROWTH MODE; LASER REFLECTION; MICROSTRUCTURAL CHANGES; MULTIPLE LASERS; REFLECTANCE SIGNALS; ROOT MEAN SQUARE ROUGHNESS; SAPPHIRE SUBSTRATES; SURFACE-ROUGHENING; TEMPERATURE RANGE; TENSILE GROWTH STRESS; THICKNESS DEPENDENCE;

ADSORPTION; ALUMINA; AMORPHOUS SILICON; ATOMIC FORCE MICROSCOPY; COALESCENCE; ISOTHERMAL ANNEALING; OPTICAL FILMS; OPTICAL SYSTEMS; SAPPHIRE; STIFFNESS; STOICHIOMETRY; SUBSTRATES; SURFACE ROUGHNESS;

AMORPHOUS FILMS;

EID: 0036137270     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1425076     Document Type: Article

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