Real time measurement of epilayer strain using a simplified wafer curvature technique

Materials Research Society Symposium - Proceedings

Volumn 406, Issue , 1996, Pages 491-496

  Floro, J A ^a   Chason, E ^a   Lee, S R ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); LASER APPLICATIONS; MOLECULAR BEAM EPITAXY; REAL TIME SYSTEMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; STRAIN; STRAIN MEASUREMENT; STRESS RELAXATION;

EPILAYER STRAIN; POST GROWTH ANNEALING; WAFER CURVATURE;

THIN FILMS;

EID: 0029735313     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)