-
2
-
-
0030233919
-
Optical proximity effects, part 3
-
Autumn
-
C.A. Mack, "Optical proximity effects, Part 3", Microlithography World, Vol. 5, No. 4, pp. 23-24, Autumn 1996.
-
(1996)
Microlithography World
, vol.5
, Issue.4
, pp. 23-24
-
-
Mack, C.A.1
-
3
-
-
0031166124
-
Full-chip optical proximity correction with depth of focus enhancement
-
Summer
-
J.F. Chen, T. Laidig, K.E. Wampler and R. Caldwell, "Full-chip optical proximity correction with depth of focus enhancement", Microlithography World, Vol. 6, No. 3, pp. 5-13, Summer 1997.
-
(1997)
Microlithography World
, vol.6
, Issue.3
, pp. 5-13
-
-
Chen, J.F.1
Laidig, T.2
Wampler, K.E.3
Caldwell, R.4
-
4
-
-
0000260039
-
A practical technology path to sub-0.10 micron process generations via enhanced optical lithography
-
SPIE
-
th Annual Symposium on Photomask Technology, SPIE Vol. 3873, pp. 995-1016, 1999.
-
(1999)
th Annual Symposium on Photomask Technology
, vol.3873
, pp. 995-1016
-
-
Chen, J.F.1
Laidig, T.2
Wampler, K.E.3
Caldwell, R.4
Nakagawa, K.H.5
Liebchen, A.6
-
5
-
-
0033683077
-
Comparison of OPC rules and common process windows for 130-nm features using binary and attenuated phase-shift masks
-
SPIE
-
M.T. Reilly, C.R. Parker, K. Kvam, R.J. Socha and M.V. Dusa, "Comparison of OPC rules and common process windows for 130-nm features using binary and attenuated phase-shift masks", Optical Microlithography XIII, SPIE Vol. 4000, pp. 1209-1222, 2000.
-
(2000)
Optical Microlithography XIII
, vol.4000
, pp. 1209-1222
-
-
Reilly, M.T.1
Parker, C.R.2
Kvam, K.3
Socha, R.J.4
Dusa, M.V.5
-
6
-
-
0036410132
-
Maximizing common process latitude by integrated process development for 130 nm lithography
-
SPIE, Paper 77
-
M.T. Reilly, C.R. Parker, F. Fischer and T. Hiar, "Maximizing common process latitude by integrated process development for 130 nm lithography", Optical Microlithography XV, SPIE Vol, 4691, Paper 77, 2002.
-
(2002)
Optical Microlithography XV
, vol.4691
-
-
Reilly, M.T.1
Parker, C.R.2
Fischer, F.3
Hiar, T.4
-
7
-
-
0033716193
-
Factors affecting pitch bias in lithography simulation
-
SPIE
-
S.A. Robertson, E.K. Pavelchek, C.I. Swible-Keane, J.F. Bohland and M.T. Reilly, "Factors affecting pitch bias in lithography simulation", Optical Microlithography XIII, SPIE Vol. 4000, pp. 744-758, 2000.
-
(2000)
Optical Microlithography XIII
, vol.4000
, pp. 744-758
-
-
Robertson, S.A.1
Pavelchek, E.K.2
Swible-Keane, C.I.3
Bohland, J.F.4
Reilly, M.T.5
-
8
-
-
0034839563
-
Automatic resist parameter calibration procedure for lithographic simulation
-
SPIE
-
B. Tolkuehn, M. Hoepfl, A. Erdmann, S. Majoni and M. Jess, "Automatic resist parameter calibration procedure for lithographic simulation", Lithography for Semiconductor Manufacturing II, SPIE Vol. 4404, pp. 313-324, 2001.
-
(2001)
Lithography for Semiconductor Manufacturing II
, vol.4404
, pp. 313-324
-
-
Tolkuehn, B.1
Hoepfl, M.2
Erdmann, A.3
Majoni, S.4
Jess, M.5
-
9
-
-
0034846063
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Comparison of simulation approaches for chemically amplified resists
-
SPIE
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A. Erdmann, W. Henke, S.A. Robertson, E. Richter, B. Tolkuehn and W. Hoppe, "Comparison of simulation approaches for chemically amplified resists", Lithography for Semiconductor Manufacturing II, SPIE Vol. 4404, pp. 99-110, 2001.
-
(2001)
Lithography for Semiconductor Manufacturing II
, vol.4404
, pp. 99-110
-
-
Erdmann, A.1
Henke, W.2
Robertson, S.A.3
Richter, E.4
Tolkuehn, B.5
Hoppe, W.6
-
10
-
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0034761538
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Modeling the impact of thermal history during post exposure bake on the lithographic performance of chemically amplified resists
-
SPIE
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M.D. Smith, C.A. Mack and J.S. Petersen, "Modeling the impact of thermal history during post exposure bake on the lithographic performance of chemically amplified resists", Advances in Resist Technology and Processing XVIII, SPIE Vol. 4345, pp 1013-1021, 2001.
-
(2001)
Advances in Resist Technology and Processing XVIII
, vol.4345
, pp. 1013-1021
-
-
Smith, M.D.1
Mack, C.A.2
Petersen, J.S.3
-
11
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0034844427
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0.11 μm imaging in KrF lithography using dipole illumination
-
SPIE
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M. Eurlings, E. van Settien, J.A. Torres, M.V. Dusa, R.J.Socha, L. Capodieci and J. Finders, "0.11 μm imaging in KrF lithography using dipole illumination", Lithography for Semiconductor Manufacturing II, SPIE Vol. 4404, pp. 266-278, 2001.
-
(2001)
Lithography for Semiconductor Manufacturing II
, vol.4404
, pp. 266-278
-
-
Eurlings, M.1
Van Settien, E.2
Torres, J.A.3
Dusa, M.V.4
Socha, R.J.5
Capodieci, L.6
Finders, J.7
-
12
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0005087312
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Automatic calibration of lithography simulation parameters using multiple data sets
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Paper PH7
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J.D. Byers, C.A. Mack, R. Huang and S. Jug, "Automatic calibration of lithography simulation parameters using multiple data sets", MNE 2001, Paper PH7, 2001.
-
(2001)
MNE 2001
-
-
Byers, J.D.1
Mack, C.A.2
Huang, R.3
Jug, S.4
-
13
-
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0034839897
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Automatic calibration of lithographic simulation parameters
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SPIE
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S. Jug, R. Huang, J.D. Byers and C.A. Mack, "Automatic calibration of lithographic simulation parameters", Lithography for Semiconductor Manufacturing II, SPIE Vol. 4404, pp. 380-395, 2001.
-
(2001)
Lithography for Semiconductor Manufacturing II
, vol.4404
, pp. 380-395
-
-
Jug, S.1
Huang, R.2
Byers, J.D.3
Mack, C.A.4
-
14
-
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0034852070
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Towards a universal resist dissolution model for lithography simulation
-
SPIE
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S.A. Robertson, C.A. Mack and M. Maslow, "Towards a universal resist dissolution model for lithography simulation", Lithography for Semiconductor Manufacturing II, SPIE Vol. 4404, pp. 111-122, 2001.
-
(2001)
Lithography for Semiconductor Manufacturing II
, vol.4404
, pp. 111-122
-
-
Robertson, S.A.1
Mack, C.A.2
Maslow, M.3
-
15
-
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0032633614
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The accuracy of current model descriptions of a DUV photoresist
-
SPIE
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D. Kang, E.K. Pavelchek and C.I. Swible-Keane, "The accuracy of current model descriptions of a DUV photoresist", Advances in Resist Technology and Processing XVI, SPIE Vol. 3678, pp 877-890, 1999.
-
(1999)
Advances in Resist Technology and Processing XVI
, vol.3678
, pp. 877-890
-
-
Kang, D.1
Pavelchek, E.K.2
Swible-Keane, C.I.3
-
16
-
-
0000752766
-
Effect of acid diffusion on performance in positive deep ultraviolet resists
-
T.H. Fedynyshyn, J.W. Thackeray, J.H. Georger and M.D. Denison, "Effect of acid diffusion on performance in positive deep ultraviolet resists", J. Vac. Sci. Tecnhol. B, Vol. 12, pp. 3888-3894, 1994.
-
(1994)
J. Vac. Sci. Tecnhol. B
, vol.12
, pp. 3888-3894
-
-
Fedynyshyn, T.H.1
Thackeray, J.W.2
Georger, J.H.3
Denison, M.D.4
-
17
-
-
0032662522
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Simple method for measuring acid generation quantum efficiency at 193 nm
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SPIE
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C.R. Szmanda, R.J. Kavanagh, J.R. Bohland, J.F. Cameron, P. Trefonas and R.F. Blacksmith, "Simple method for measuring acid generation quantum efficiency at 193 nm", Advances in Resist Technology and Processing XVI, SPIE Vol. 3678, pp. 857-866, 1999.
-
(1999)
Advances in Resist Technology and Processing XVI
, vol.3678
, pp. 857-866
-
-
Szmanda, C.R.1
Kavanagh, R.J.2
Bohland, J.R.3
Cameron, J.F.4
Trefonas, P.5
Blacksmith, R.F.6
-
18
-
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0032648453
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Matching simulation and experiment for chemically amplified resists
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SPIE
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C.A. Mack, M. Ercken and M. Moelants, "Matching simulation and experiment for chemically amplified resists", Optical Microlithography XII, SPIE Vol. 3679, pp. 183-192, 1999.
-
(1999)
Optical Microlithography XII
, vol.3679
, pp. 183-192
-
-
Mack, C.A.1
Ercken, M.2
Moelants, M.3
-
19
-
-
0005065933
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Determining and improving the predictability of lithography simulation
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SPIE, Paper 43
-
J.D. Byers, W.B. Howard, Mo Pochkowski and C.A. Mack, "Determining and improving the predictability of lithography simulation", Advances in Resist Technology and Processing XIX, SPIE Vol. 4690, Paper 43, 2002.
-
(2002)
Advances in Resist Technology and Processing XIX
, vol.4690
-
-
Byers, J.D.1
Howard, W.B.2
Pochkowski, M.3
Mack, C.A.4
-
20
-
-
0036030867
-
Measuring and simulating postexposure bake temperature effects in chemically amplified photoresists
-
SPIE, Paper 112
-
D. Kang and S.A. Robertson, "Measuring and simulating postexposure bake temperature effects in chemically amplified photoresists", Advances in Resist Technology and Processing XIX, SPIE Vol. 4690, Paper 112, 2002.
-
(2002)
Advances in Resist Technology and Processing XIX
, vol.4690
-
-
Kang, D.1
Robertson, S.A.2
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