0.11 μm imaging in KrF lithography using dipole illumination

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4404, Issue , 2001, Pages 266-278

  Eurlings, M ^a   Van Setten, E ^a   Torres, J A ^a   Dusa, M ^a   Socha, R ^a   Capodieci, L ^a   Finders, J ^a  

^a ASML   (Netherlands)

Author keywords

Dipole illumination; Double exposure; Imaging enhancement technique; Low K1 lithography

Indexed keywords

CRYSTAL ORIENTATION; FLUORINE COMPOUNDS; IMAGING TECHNIQUES; MASKS;

DIPOLE ILLUMINATION; KRYPTON FLUORIDE LITHOGRAPHY;

PHOTOLITHOGRAPHY;

EID: 0034844427     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.425215     Document Type: Article

References (9)

1. Low-k1 imaging: How low can we go?
2. Patterning 220 nm pitch DRAM pattern by using double mask exposure
3. Printing 130 nm DRAM isolation pattern: Zernike correlation and tool improvement
4. Effects of advanced illumination schemes on design manufacturability and interaction with optical proximity corrections
5. DUV lithography (KrF) for 130 nm using off-axis illumination and assisting features
6. Practical method for full-chip optical proximity correction
7. 130 nm ACLV on 0.7 NA step & scan systems using binary masks
8. Forbidden pitches for 130 nm lithography and below