Modeling the impact of thermal history during post exposure bake on the lithographic performance of chemically amplified resists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue II, 2001, Pages 1013-1021

  Smith, M D ^a   Mack, C A ^a   Petersen, J S ^a  

^a KLA Tencor Austin   (United States)

Author keywords

Double bake; Heat transfer; Hotplate; Lithography simulation; PROLITH

Indexed keywords

COMPUTER SIMULATION; COOLING; DIFFUSION; HEAT TRANSFER; THERMAL EFFECTS;

POST EXPOSURE BAKE (PEB);

PHOTORESISTS;

EID: 0034761538     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.436826     Document Type: Conference Paper

References (7)

1. The formation of diffusion wells in acid catalyzed photoresists
2. Thermal design methodology of hot and chill plates for microlithography
3. Conjugate heat-transfer analysis of 300-mm bake station
4. Temperature rising effect of 193 nm chemically amplified resist during post exposure bake
5. Standard for 200mm polished monocrystalline silicon wafers
6. Effects of DUV sensitivities of lithographic process window
7. Reaching for 0.25μm with current available tool set