Maximizing common process latitude by integrated process development for 130 nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4691 II, Issue , 2002, Pages 774-784

  Reilly, Michael ^a   Parker, Colin ^a   Fischer, Frank ^a   Hiar, Todd ^b  

^a SHIPLEY COMPANY   (United States)

^b ASML US Inc   (United States)

Author keywords

Annular; Figure of merit; MEF; Process latitude; Proximity bias; Quasar

Indexed keywords

ILLUMINATING ENGINEERING; IMAGE ANALYSIS; LIGHT SCATTERING; MASKS;

PROXIMITY BIAS;

PHOTOLITHOGRAPHY;

EID: 0036410132     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.474626     Document Type: Article

References (9)

1. M. Reilly, C. Parker, K. Kvam, R. Socha, M. Dusa, "Comparison of OPC rules and common process windows for 130nm features using binary and attenuated phase shift masks", Proc. SPIE, 2000, Vol 4000, pp. 1209-1222.
2. PROLITH/2 is a trademark of the KLA-Tencor Corporation.
3. Quasar is a trademark of the ASML Corporation.
4. J. Finders, J. van Schoot., P. Vanoppen, R. Socha, M. Dusa, G. Vandenherghe, K. Ronse, "KrF Lithography for 130 nm", Proc. SPIE, 2000, Vol 4000, pp. 192-205.
5. J. van Schoot et al., "The mask error factor: causes and implications for process latitude", Proc. SPIE, 1999, Vol. 3679, pp. 250-260.
6. M. Reilly, C. Parker, S. Robertson, "MEEF Management and the Effect of Assist Feature Optical Proximity Corrections", Proc. SPIE, 2001, Vol 4404 pp. 180-187.
7. C. Parker, M. Reilly, "MEEF measurement and model verification for 0.3 kl lithography", Proc. SPIE, 2000, vol. 4181, pp. 33-40.
8. th Annual Bacus Symposium, SPIE Vol 3873, pp995-1016.
9. R. Socha, M. Dusa, L. Capodieci, J. Finders, F. Chen, D. Flagello, K. Cummings, "Forbidden Pitches for 130 nm Lithography and Below", Proc. SPIE, 2000, Vol 4000, pp. 1140-1155.