Measuring and simulating postexposure bake temperature effects in chemically amplified photoresists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4690 II, Issue , 2002, Pages 963-970

  Kang, Doris ^a   Robertson, Stewart ^a  

^a SHIPLEY COMPANY   (United States)

Author keywords

193 nm photoresists; 248 nm photoresists; Chemical amplification; Lithographic simulation

Indexed keywords

ACTIVATION ENERGY; COMPUTER SIMULATION; COMPUTER SOFTWARE; DIFFUSION; INFRARED SPECTROSCOPY; PHOTOLITHOGRAPHY; RATE CONSTANTS;

POSTEXPOSURE BAKE (PEB) TEMPERATURE EFFECTS;

PHOTORESISTS;

EID: 0036030867     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.474171     Document Type: Conference Paper

References (5)

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