Plasma surface modification for ion penetration barrier in organosiloxane polymer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 1884-1890

  Mallikarjunan, A ^a   Yang, G R ^b   Murarka, S P ^a   Lu, T M ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Research Rensselaer Polytechnic Institute   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC POTENTIAL; ION IMPLANTATION; ORGANIC POLYMERS; PERMITTIVITY; REFRACTIVE INDEX; SILICON COMPOUNDS; SURFACE PROPERTIES; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM ION PENETRATION; BIAS TEMPERATURE STRESSING; HYBRID ORGANOSILOXANE POLYMER; ION PENETRATION BARRIER; PLASMA SURFACE MODIFICATION; PLASMA TREATMENT; TRIANGULAR VOLTAGE SWEEP; ZERO BARRIER THICKNESS;

PLASMA SIMULATION;

EID: 0036026355     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1508803     Document Type: Article

References (28)

1. SIA International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, CA, 1999); http://www.semichips.org
2. R. Tsu, J. W. McPherson, and W. R. McKee, in Proceedings of 2000 IEEE International Reliability Physics Symposium (IEEE, New York, 2000), p. 348.
3. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley, New York, 1982).
4. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed. (Wiley-Interscience, New York, 1998), p. 366.
5. A. L. S. Loke, J. Wetzel, P. Townsend, T. Tanabe, R. Vrtis, M. Zussman, D. Kumar, C. Ryu, and S. Wong, IEEE Trans. Electron Devices 46, 2178 (1999).
6. Y. Hirose, A. Kahn, V. Aristov, P. Soukiassian, V. Bulovic, and S. R. Forrest, Phys. Rev. B 54, 13748 (1996).
7. A. Mallikarjunan, S. P. Murarka, and T.-M. Lu, Appl. Phys. Lett. 79, 1855 (2001).
8. S. Rogojevic, A. Jain, F. Wang, W. N. Gill, P. C. Wayner, J. L. Plawsky, T.-M. Lu, G.-R. Yang, W. A. Lanford, A. Kumar, H. Bakhru, and A. N. Roy, J. Vac. Sci. Technol. B 19, 354 (2001).
9. X. Zhao, M. Leavy, N. Magtoto, and J. A. Kelber, Proceedings of 2001 International Interconnect Technology Conference (IEEE, New York, 2001), p. 6.
10. S.-W. Chung, S.-Y. Kim, J.-H. Shin, J.-K. Kim, and J. Park, Jpn. J. Appl. Phys., Part 1 39, 5809 (2000).
11. P.-T. Liu, T.-C. Chang, H. Su, Y.-S. Mor, Y.-L. Yang, H. Chung, J. Hou, and S. M. Sze, J. Electrochem. Soc. 148, F30 (2001).
12. P.-T. Liu, T.-C. Chang, Y.-L. Yang, Y.-F. Cheng, J.-K. Lee, F.-Y. Shih, E. Tsai, G. Chen, and S. M. Sze, J. Electrochem. Soc. 147, 1186 (2000).
13. A. Mallikarjunan, S. P. Murarka, and T.-M. Lu, J. Electrochem. Soc. 149, F155 (2002).
14. D. L. Flamm and G. K. Herb, in Plasma Etching: An Introduction, edited by D. M. Manos and D. L. Flamm (Academic, San Diego, CA, 1989), p. 82.
15. T. C. Chang, P. T. Liu, Y. S. Mor, S. M. Sze, Y. L. Yang, M. S. Feng, F. M. Pan, B. T. Dai, and C. Y. Chang, J. Electrochem. Soc. 146, 3802 (1999).
16. J.-J. Kim, H.-H. Park, and S.-H. Hyun, Thin Solid Films 377, 525 (2000).
17. P.-T. Liu, T.-C. Chang, S. M. Sze, F. M. Pan, Y. J. Mei, W. F. Wu, M. S. Tsai, B. T. Dai, C. Y. Chang, F. Y. Shih, and H. D. Huang, Thin Solid Films 332, 345 (1998).
18. P.-T. Liu, T.-C. Chang, Y.-S. Mor, and S. M. Sze, Jpn. J. Appl. Phys., Part 1 38, 3482 (1999).
19. S. A. Campbell, The Science and Engineering of Microelectronic Fabrication (Oxford University Press, New York, 1996), p. 247.
20. A. Grill, Cold Plasma in Materials Fabrication: From Fundamentals to Applications (IEEE, Piscataway, NJ, 1994), p. 153.
21. B. Callen, M. L. Ridge, S. Lahooti, A. W. Neumann, and R. N. S. Sodhi, J. Vac. Sci. Technol. A 13, 2023 (1995).
22. K.-M. Chang, I.-C. Deng, S.-J. Yeh, and Y.-P. Tsai, Electrochem. Solid-State Lett. 2, 634 (1999).
23. P.-T. Liu, T.-C. Chang, Y.-L. Yang, Y.-F. Cheng, and S. M. Sze, IEEE Trans. Electron Devices 47, 1733 (2000).
24. J. K. Olthoff, R. J. Van Brunt, and S. B. Radovanov, J. Appl. Phys. 72, 4566 (1992).
25. A. Hallil, O. Zabeida, M. R. Wertheimer, and L. Martinu, J. Vac. Sci. Technol. A 18, 882 (2000).
26. I. Peres, N. Ouadoudi, L. C. PItchford, and J. P. Boeuf, J. Appl. Phys. 72, 4533 (1992).
27. Y. Wang and J. K. Olthoff, J. Appl. Phys. 85, 6358 (1999).
28. S. P. Murarka, Mater. Sci. Eng., R. 19, 87 (1997).