The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment

Journal of the Electrochemical Society

Volumn 146, Issue 10, 1999, Pages 3802-3806

  Chang, T C ^a,b   Liu, P T ^a,b   Mor, Y S ^a,b,c   Sze, S M ^a,b,c   Yang, Y L ^a,b,c   Feng, M S ^a,b,c   Pan, F M ^a,b,c   Dai, B T ^a,b,c   Chang, C Y ^a,b,c  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DECOMPOSITION; LEAKAGE CURRENTS; MOISTURE; NITROGEN OXIDES; PASSIVATION; PERMITTIVITY; PHOTORESISTS; PLASMA APPLICATIONS; SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

METHYLSILSESQUIOXANE;

DIELECTRIC FILMS;

EID: 0033350149     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392554     Document Type: Article

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