Enhancing the oxygen plasma resistance of low-k methylsilsesquioxane by H2 plasma treatment

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 6 A, 1999, Pages 3482-3486

  Liu, Po Tsun ^a   Chang, Ting Chang ^b   Mor, Yi Shian ^a   Sze, Simon M ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; LEAKAGE CURRENTS; MOISTURE; ORGANIC COMPOUNDS; PASSIVATION; PERMITTIVITY; PLASMA APPLICATIONS;

HYDROGEN PLASMA TREATMENT; METHYLSILSESQUIOXANE;

SEMICONDUCTING FILMS;

EID: 0032636373     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.3482     Document Type: Article

References (10)

1. T. E. Seidel and C. H. Ting: Mater. Res. Soc. Symp. Proc. 381 (1995) 3.
2. Y. J. Mei, T. C. Chang, S. J. Chang and C. Y. Chang: Thin Solid Films 308 (1997) 501.
3. A. Nakashima, M. Egami, M. Komatsu, Y. Ohkura, M. Miyajima, H. Harada and S. Fukuyama: Dielectrics for ULSI Multilevel Interconnection Conf. (1997) p. 303.
4. B. T. Ahlburn, G. A. Brown, T. R. Seha, T. F. Zoes, Y. Yokose, D. S. Balance and K. A. Scheibert: Dielectrics for ULSI Multilevel Interconnection Conf. (1995) p. 36.
5. P. T. Liu, T. C. Chang, S. M. Sze, F. M. Pan, Y. J. Mei, W. F. Wu, M. S. Tsai, B. T. Dai, C. Y. Chang, F. Y. Shih and H. D. Huang: Thin Solid Film 332 (1998) 345.
6. M. H. Jo, H. H. Park, D. J. Kim, S. H. Hyun and S. Y. Choi: J. Appl. Phys. 82 (1997) 1299.
7. T. Ramos, K. Roderick, A. Maskara and D. M. Smith: Mater. Res. Soc. Sym. Proc. 443 (1997) 91.
8. J. Waeterloos, H. Meynen, B. Coenegrachts, J. Grillaert and L. Vanden hove: Dielectrics for ULSI Multilevel Interconnection Conf. (1996) p. 52.
9. N. H. Hendricks: Mater. Res. Soc. Symp. Proc. 443 (1997) 3.
10. S. Ito, Y. Homma, E. Sasaki, S. Uchimara and H. Morishima: J. Electrochem. Soc. 137 (1990) 1212.