Suppression of copper diffusion through barrier metal-free hydrogen silsesquioxane dielectrics by NH3 plasma treatment

Electrochemical and Solid-State Letters

Volumn 2, Issue 12, 1999, Pages 634-636

  Chang, Kow Ming ^a   Deng, I Chung ^a   Yeh, Sy Jer ^a   Tsai, Yao Pin ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL BONDS; COPPER; DIFFUSION; HYDROGEN INORGANIC COMPOUNDS; LEAKAGE CURRENTS; PASSIVATION; PERMITTIVITY; POROUS MATERIALS;

HYDROGEN SILSESQUIOXANE; PLASMA TREATMENT;

DIELECTRIC FILMS;

EID: 0033283436     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390931     Document Type: Article

References (7)

1. P. T. Liu, T. C. Chang, S. M. Sze, F. M. Pan, Y. J. Mei, W. F. Wu, M. S. Tsai, B. T. Dai, C. Y. Chang, F. Y. Shih, and H. D. Huang, Thin Solid Films, 332, 345 (1998).
2. K. Migagi, H. Ishikawa, T. Usami, M. Suzuki, K. Inoue, N. Oda, S. Chikaki, I. Sakai, and T. Kikkawa, Tech. Dig. Int. Electron Devices Meet., 365 (1996).
3. G. M. Adema, L. T. Hwang, G. A. Rinne, and I. Turlik, IEEE Trans. Compon., Hybrids, Manuf. Technol., 16, 53 (1993).
4. D. S. Gardner, J. Onuki, K. Kudoo, Y. Misawa, and Q. T. Vu, Thin Solid Films. 262, 104 (1995).
5. M-A. Nicolet and M. Bartur, J. Vac. Sci. Technol., 19, 786 (1981).
6. G. Raghavan, C. Chiang, P. B. Ander, S. M. Tzeng, R. Villasol, G. Bai, M. Bohr, and D. B. Fraser, Thin Solid Films, 262, 168 (1995).
7. M. Vogt, M. Kachel, M. Plotner, and K. Drescher, Microelectron. Eng., 37/38, 181 (1997).