Preconditioning of c-plane sapphire for GaN molecular beam epitaxy by electron cyclotron resonance plasma nitridation

Journal of Applied Physics

Volumn 83, Issue 11, 1998, Pages 6023-6027

  Heinlein, Christian ^a   Grepstad, Jostein K ^a   Einfeldt, Sven ^b   Hommel, Detlef ^b   Berge, Torunn ^a,d   Grande, Alf P ^c,d  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b UNIVERSITY OF BREMEN   (Germany)

^c SINTEF   (Norway)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041301378     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367470     Document Type: Article

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