Critical thickness of AlN thin film grown on Al2O3(0001)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 7, 2001, Pages 4677-4679

  Kim, Jin Woo ^a,b   Hwang, Yoon Hwae ^a   Cho, Jin Hyung ^a   Kim, Hyung Kook ^a  

^a Pusan National University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Critical thickness; Epitaxy; Sputtering; Thin film; X ray scattering

Indexed keywords

ALUMINA; ALUMINUM NITRIDE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; LATTICE CONSTANTS; SINGLE CRYSTALS; SPUTTERING; X RAY SCATTERING;

EXTENDED ATOMIC DISTANCE MISMATCH (EADM);

THIN FILMS;

EID: 0035388250     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.4677     Document Type: Article

References (10)