Effect of buffer layer preparation on GaN epilayers grown by gas-source molecular-beam epitaxy

Applied Physics Letters

Volumn 78, Issue 6, 2001, Pages 754-756

  Bousquet, V ^a   Heffernan, J ^a   Barnes, J ^a   Hooper, S ^a  

^a SHARP LABORATORIES OF EUROPE LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000346750     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1344227     Document Type: Article

References (13)

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