Investigation of GaN deposition on Si, Al2O3, and GaAs using in situ mass spectroscopy of recoiled ions and reflection high-energy electron diffraction

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 3, 1996, Pages 2357-2361

  Taferner, W T ^a   Bensaoula, A ^a   Kim, E ^a   Bousetta, A ^a  

^a UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001588260     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588860     Document Type: Article

References (20)

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