The investigation of GaN growth on silicon and sapphire using in-situ time-of-flight low energy ion scattering and RHEED

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 167-174

  Taferner, W T ^a   Kim, E ^a   Bousetta, A ^a  

^a UNIVERSITY OF HOUSTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; DESORPTION; ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; IMPURITIES; MASS SPECTROMETRY; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SILICON; SURFACE STRUCTURE;

MASS SPECTROSCOPY OF RECOILED IONS; NITRIDATION; TIME OF FLIGHT DIRECT RECOIL SPECTROSCOPY; TIME OF FLIGHT LOW ENERGY ION SCATTERING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030191981     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00020-6     Document Type: Article

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